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NOT RECOMMENDED FOR NEW DESIGN
USE DMN3110S
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
DMN3112S
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
? 20
Unit
V
V
Drain Current (Note 6)
Drain Current (Note 6)
Body-Diode Continuous Current (Note 6)
T A = +25°C
T A = +70°C
Pulsed
I D
I DM
I S
5.8
4.2
20
2.0
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J, T STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
800
? 80
? 800
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
V GS = ±25V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.3
??
?
?
?
1.9
47
92
4.7
0.78
2.2
57
112
?
1.1
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 5.8A
V GS = 4.5V, I D = 4.2A
V DS = 5V, I D = 4.2A
V GS = 0V, I S = 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
268
73
50
?
?
?
pF
pF
pF
V DS = 5V, V GS = 0V
f = 1.0MHz
Notes:
6. Device mounted on FR-4 PCB. t ≤ 5 sec.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3112S
Document number: DS31445 Rev. 5 - 3
2 of 6
www.diodes.com
February 2014
? Diodes Incorporated
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